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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2085 DESCRIPTION *With TO-220 package *High breakdown voltage *High transition frequency APPLICATIONS *For line-operated AF amplifier and chrominance output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 0.15 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=100A ;IE=0 IC=1mA ;IB=0 IE=100A ;IC=0 IC=100mA ;IB=10mA IC=50mA ; VCE=10V VCE=300V;IB=0 VCB=300V;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=50mA ; VCE=10V IE=0; VCB=30V;f=1MHz IC=20mA ; VCE=30V 30 30 MIN 300 300 5 2SC2085 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICEO ICBO IEBO hFE-1 hFE -2 COB fT TYP. MAX UNIT V V V 5.0 1.2 20 10 10 V V A A A 150 8 55 pF MHz hFE-2 classifications P 30-60 Q 50-100 R 80-150 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2085 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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